Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy
Date of Issue2000
School of Electrical and Electronic Engineering
Electrical, optical and structural properties of the Be-doped GalnAs/AlGaAs strained multiple quantum-well structures (MQWs) with different doping densities in the GalnAs wells, were systematically investigated. Extensive optical characterisation revealed that higher Be-doping densities in the well were found to enhance compressive strain and increase barrier height of the GalnAs/AlGaAs MQWs. The experimental results were verified by our theoretical calculation. The infrared absorption wavelength of the p-type GalnAs/AlGaAs strained MQW structures was found to vary from 8.35 (lm to 8.2 |im and 8.0 jxm as the Be-doping density increases from 1x10 cm" to 1x10 cm" and 2x10 cm" , respectively. These observations are in good agreement with the theoretical estimations based on the six-band Luttinger-Kohn model when the Be-doping effects were taken into account. The agreements indicated that the Be-doping effects were successfully applied into the Luttinger-Kohn model. In addition, the high Be doping density in the well may deteriorate the interface quality and/or enhance the impurity diffusion and defects. This was verified by the line width of the photoluminescence, X-ray satellite peak and infrared absorption spectra.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Nanyang Technological University