Development of NTU 1.2(m)m CMOS process technology.
Date of Issue2003
School of Electrical and Electronic Engineering
This project aims to develop and optimize the baseline 1.2um Twin-Well CMOS technology which will be extended to 1.2um SiGe BiCMOS technology in the future Processes such as Punch-through implant, Sidewall spacer and Halo Implant were studied to control the short channel effect.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Nanyang Technological University