dc.contributor.authorChan, Ching Kok.en_US
dc.date.accessioned2008-09-17T09:23:18Z
dc.date.available2008-09-17T09:23:18Z
dc.date.copyright2002en_US
dc.date.issued2002
dc.identifier.urihttp://hdl.handle.net/10356/3149
dc.description.abstractExperiments have been done on the use of different metallization target, different metallization scheme and deposition temperature to characterize on the silicon nodule defect. This report summarizes on the investigation on the silicon precipitation problem.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleFormation of silicon nodules and the different methods of removing themen_US
dc.typeThesisen_US
dc.contributor.supervisorAhn, Jaeshinen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMSC(MICROELECTRONICS)en_US


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