Formation of silicon nodules and the different methods of removing them
Date of Issue
2002School
School of Electrical and Electronic Engineering
Abstract
Experiments have been done on the use of different metallization target, different metallization scheme and deposition temperature to characterize on the silicon nodule defect. This report summarizes on the investigation on the silicon precipitation problem.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Type
Thesis
Rights
Nanyang Technological University
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