Characterization of InP based high electron mobility transistor structures grown by solid source MBE.
Too, Patrick Heng Kwee.
Date of Issue2000
School of Electrical and Electronic Engineering
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optical, and structural characterisations of this material system are reported and discussed in detail.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University