Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology.
Yoon, Soon Fatt.
Date of Issue1998
School of Electrical and Electronic Engineering
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.
DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Nanyang Technological University