Design and fabrication of insulated gate bipolar transistor (IGBT) using wafer bonding technology.
Tan, Cher Ming.
Tse, Man Siu.
Date of Issue2003
School of Electrical and Electronic Engineering
With the enhanced performance of the novel Lateral IGBT can be proved through simulation, its fabrication remains a challenge. In this project, we investigated many different fabrication methodologies, and wafer bonding is found to be only viable choice.
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Nanyang Technological University