Characterization of compound semiconductor for quantum well infrared photodetectors
Zhang, Dao Hua
Date of Issue2002
School of Electrical and Electronic Engineering
In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University