dc.contributor.authorSiek, Liter.en_US
dc.date.accessioned2008-09-17T09:14:17Z
dc.date.available2008-09-17T09:14:17Z
dc.date.copyright2001en_US
dc.date.issued2001
dc.identifier.urihttp://hdl.handle.net/10356/2754
dc.description.abstractWe present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronics
dc.titleFabrication and characterisation of microelectronic devices, circuits and systems IIIen_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.reportnumberRGM 17/99


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