Fabrication and characterisation of microelectronic devices, circuits and systems III
Date of Issue2001
School of Electrical and Electronic Engineering
We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Nanyang Technological University