Modeling of submicron MOSFETs
Chua, Ley Mui.
Date of Issue1994
School of Electrical and Electronic Engineering
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
NANYANG TECHNOLOGICAL UNIVERSITY