Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
Ang, Chew Hoe
Date of Issue1995
School of Electrical and Electronic Engineering
In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier stress.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
NANYANG TECHNOLOGICAL UNIVERSITY