Design concerns for EEPROM
Tan, Hong Mui.
Date of Issue1995
School of Electrical and Electronic Engineering
The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device degradation was invesigaed on the EEPROM cell.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
NANYANG TECHNOLOGICAL UNIVERSITY