Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

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Author
Miao, Yubo.
Date of Issue
1995
School
School of Electrical and Electronic Engineering
Abstract
Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photoluminescence (PL) showed a strong dependence of the PL linewidth on the substrate temperature.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Type
Thesis
Rights
NANYANG TECHNOLOGICAL UNIVERSITY
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