Thin dielectric films with low dielectric constants for quarter micron devices
Chua, Chee Tee.
Date of Issue1999
School of Materials Science and Engineering
The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vapour deposition (CVD) techniques. Characterisation of low k films is important to IC manufacturing as it also enhances the development of new low k materials that are more promising than conventional SiO2.