dc.contributor.authorFan, Yu
dc.date.accessioned2009-06-18T07:45:57Z
dc.date.available2009-06-18T07:45:57Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/10356/17999
dc.description.abstractThis report focuses on fabrication and investigation of double-gated Carbon Nanotube Field-Effect-Transistors (CNTFETs) in which both partial top gate and global back gate are fabricated on the same device. Two design structures were fabricated to compare improvements of high K dielectric material on the performance of the devices: the first structure uses Si3N4 as partial top gate dielectric while the second structure employs high K material- Al2O3 as partial top gate dielectric. To further improve device structure, the second design was fabricated on transparent substrate so that once the structure is successfully realized it can be further improved to form a rounded-partial top gate structure in which the partial top gate is expected to have higher controllability over the carbon nanotube channel.en_US
dc.format.extent73 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleDouble-gated CNTFETs with Al2O3/Si3N4 as gate dielectricsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorZhang Qing (EEE)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeELECTRICAL and ELECTRONIC ENGINEERINGen_US
dc.contributor.researchMicroelectronics Centreen_US


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