dc.contributor.authorSoh, Candy Shia Leng.
dc.date.accessioned2009-05-28T03:07:09Z
dc.date.available2009-05-28T03:07:09Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/10356/16739
dc.description.abstractThis report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. Literature reviews have been given to start out the understanding of new CNTs technology, in aiding the progress of this project. As the project proceeded along the way, more papers are being read through in order to find if any newest or latest technology can be found in the aid of the project. Before fabricating the devices for the experiments, processes and equipment are being taught and learnt to get the knowledge in order to use them usefully and handy. The fabrication of the device is the most important in this report. The equipment and the processes used to fabrication the device will be discussed in detailed. The carbon nanotube FETs may have better controllability on carbon nanotube channel due to small thickness of gate oxide and the threshold voltage of the CNTFETs may be varied with the work function of gate electrodes. Measurements and graphs are shown in the results and discussions.en_US
dc.format.extent83 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleThin gate oxide based carbon nanotube field effect transistors.en_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorZhang Qing (EEE)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeELECTRICAL and ELECTRONIC ENGINEERINGen_US


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