dc.contributor.authorNg, Yao Heng.
dc.date.accessioned2009-05-19T07:20:24Z
dc.date.available2009-05-19T07:20:24Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/10356/15953
dc.description.abstractThis report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze and characterize the grown wafers.en_US
dc.format.extent80 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleCharacterization of GaN-based semiconductor materials for device applicationsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorK Radhakrishnanen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
dc.contributor.researchMicroelectronics Centreen_US


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