Design of high performance quarter-micron retrograde well P-channel MOSFET
Swe, Toe Naing.
Date of Issue1999
School of Electrical and Electronic Engineering
This thesis presents the design and optimization through fabrication and simulation of quarter-micron surface-channel pMOSFETs for low power, high speed applications. The high performance pMOSFET is realized by careful design of the channel, well and source/drain doping profile. The main features of the fabricated devices are non-uniform channel doping, high energy deep retrograde well, p+-polysilicon gate approach and the LDD source-drain structure.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits